The structure of Si nanocrystals on SiC.
نویسندگان
چکیده
Si nanocrystals grown on cubic SiC have been characterized using high-resolution transmission electron microscopy. At lower temperatures nanocrystals grow in two different orientations, whereas at higher temperatures they grow in a single preferred orientation. The nanocrystals are shown to be unstrained; in some cases possibly due to the presence of a thin amorphous wetting layer.
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ورودعنوان ژورنال:
- Journal of electron microscopy
دوره 50 4 شماره
صفحات -
تاریخ انتشار 2001